Datasheet Details
| Part number | 2SA1146 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 222.27 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1146_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1146 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.27 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1146_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO=- 140V(Min) ·plement to Type 2SC2706 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency low power amplifier applications ·Remend for 70W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1146 isc website:.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1146 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1146 | Silicon PNP Transistor | Toshiba |
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2SA1146 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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| 2SA1141 | POWER TRANSISTOR |
| 2SA1142 | POWER TRANSISTOR |
| 2SA1147 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |