2SA1147 - POWER TRANSISTOR

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min.) High Power Dissipation Complement to Type 2SC2707 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching amplifier and general purpose applicat

📥 Download Datasheet

2SA1147 power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SA1147
Manufacturer	Inchange Semiconductor
File Size	208.22 KB
Description	POWER TRANSISTOR
Datasheet	2SA1147 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SA1147	SILICON POWER TRANSISTOR	SavantIC
2SA1141	SILICON POWER TRANSISTOR	SavantIC
2SA1142	SILICON POWER TRANSISTOR	SavantIC
2SA1144	Silicon PNP Epitaxial Type Transistor	Toshiba
2SA1145	TRANSISTOR	Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number	Description
2SA1141	POWER TRANSISTOR
2SA1142	POWER TRANSISTOR
2SA1146	POWER TRANSISTOR
2SA1102	POWER TRANSISTOR
2SA1103	POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min.) ·High Power Dissipation ·Complement to Type 2SC2707 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 150 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SA1147 isc website：www.iscsemi.