2SA882
DESCRIPTION
- High Power Dissipation-
: PC= 100W(Max.)@TC=25℃
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
VCEO Collector-Emitter Voltage
-130
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-7
℃
Tstg
Storage Temperature
-65~200 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL...
