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2SA882 - POWER TRANSISTOR

Datasheet Summary

Description

High Power Dissipation- : PC= 100W(Max.)@TC=25℃ Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power and switching applications.

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Datasheet Details

Part number 2SA882
Manufacturer Inchange Semiconductor
File Size 192.97 KB
Description POWER TRANSISTOR
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isc Silicon PNP Power Transistor 2SA882 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -7 A 100 W 150 ℃ Tstg Storage Temperature -65~200 ℃ isc website：www.iscsemi.
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