2SA887
DESCRIPTION
- With TO-202 package
- plement to type 2SC1848 APPLICATIONS
- Medium power amplifier
PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -70 -50 -5 -2 -3 1.2 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10m A; IB=0
-50
V(BR)CBO
Collector-base breakdown voltage
IC=-1m A; IE=0
-70
VCEsat
Collector-emitter saturation voltage
IC=-1A ;IB=-0.1A
-0.6
-1.2...
