2SA887 Description
2SA887 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; VCE=-5V 30 hFE-2 DC current gain IC=-1A.
2SA887 is POWER TRANSISTOR manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
SavantIC |
2SA887 | Silicon POwer Transistors |
2SA887 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; VCE=-5V 30 hFE-2 DC current gain IC=-1A.