2SA886
DESCRIPTION
- With TO-126 package
- plement to type 2SC1847
- Low collector-emitter saturation voltage APPLICATIONS
- For low-frequency power amplification
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
- Absolute Maximun Ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Open emitter Open base Open collector CONDITIONS VALUE -50 -40 -5 -1.5 -3.0 1.2- 1 PC Collector power dissipation TC=25℃ 5- 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ W UNIT V V V A A
Note)
- 1: Without heat sink
- 2: With a 100 × 100 × 2 mm A1 heat sink
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO h FE COB f T PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation...
