Datasheet Details
| Part number | 2SB1089 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.43 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2SB1089-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1089 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.43 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2SB1089-InchangeSemiconductor.pdf |
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·High Collector Current:: IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1567 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power supplies or a variety of drives in audio and other equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -5 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.6 A 1.3 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1089 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1089 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A;
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