High Collector Current:: IC= -3A
Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A
Complement to Type 2SD1567
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power supplies or a variety of drives in
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current:: IC= -3A ·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1567 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power supplies or a variety of drives in audio
and other equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-5
A
IB
Base Current-Continuous
Total Power Dissipation
@ Ta=25℃ PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-0.6
A
1.
2SB1089 Datasheet
