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2SB821 - Silicon PNP Power Transistors

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) Good Linearity of hFE Low Saturation Voltage APPLICATIONS

DC-DC converter and relay driver.

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB821 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for use in audio amplifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -300 250 125 mA mW ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.