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2SC1827 - Silicon NPN Power Transistors

General Description

Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min.) Complement to Type 2SA769 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio and general purpose applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min.) ·Complement to Type 2SA769 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1827 isc website：www.iscsemi.