Datasheet Details
| Part number | 2SC2293 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.35 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2293_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC2293.
| Part number | 2SC2293 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.35 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2293_InchangeSemiconductor.pdf |
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·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
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| 2sc2433 | Silicon NPN Power Transistor |