High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
High Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power switching
Power amplification
Power driver
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
S
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isc Silicon NPN Power Transistor
2SC2293
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power switching ·Power amplification ·Power driver
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
8
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth
2SC2293 Datasheet
