Datasheet Details
| Part number | 2SC2414 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.75 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2414_InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2414 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.75 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2414_InchangeSemiconductor.pdf |
|
|
|
High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2414 · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2414 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A;
| Part Number | Description |
|---|---|
| 2SC2415 | Silicon NPN Power Transistor |
| 2SC2416 | Silicon NPN Power Transistor |
| 2SC2408 | Silicon NPN RF Transistor |
| 2sc2433 | Silicon NPN Power Transistor |
| 2SC2437 | Silicon NPN Power Transistors |
| 2SC2438 | Silicon NPN Power Transistors |
| 2SC2481 | Power Transistor |
| 2SC2233 | Silicon NPN Power Transistor |
| 2SC2242 | Silicon NPN Power Transistor |
| 2SC2247 | Power Transistor |