| Part number | 2SC3252 |
|---|---|
| Datasheet | 2SC3252_InchangeSemiconductor.pdf |
| File Size | 198.18 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC3230 | Silicon NPN Power Transistors |
| 2SC3085 | Silicon NPN Power Transistor |
| 2SC3094 | Silicon NPN Power Transistor |
| 2SC3121 | Silicon NPN RF Transistor |
| 2SC3122 | Silicon NPN RF Transistor |
| 2SC3123 | Silicon NPN RF Transistor |
| 2SC3124 | Silicon NPN RF Transistor |
| 2SC3125 | Silicon NPN RF Transistor |
| 2SC3127 | Silicon NPN RF Transistor |
| 2SC3130 | Silicon NPN RF Transistor |
