| Part number | 2SC3659 |
|---|---|
| Datasheet | 2SC3659_InchangeSemiconductor.pdf |
| File Size | 188.10 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
|
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·High Breakdown Voltage- : VCES= 1700V (Min) ·Built-in Damper Didoe ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high power switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3659 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
See all Inchange Semiconductor datasheets
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|---|---|
| 2SC3657 | Silicon NPN Power Transistors |
| 2SC3658 | Silicon NPN Power Transistors |
| 2SC3619 | Silicon NPN Power Transistors |
| 2SC3626 | Silicon NPN Power Transistors |
| 2SC3627 | Silicon NPN Power Transistors |
| 2SC3636 | Silicon NPN Power Transistors |
| 2SC3637 | Silicon NPN Power Transistors |
| 2SC3638 | Silicon NPN Power Transistors |
| 2SC3640 | Silicon NPN Power Transistor |
| 2SC3678 | Silicon NPN Power Transistors |
