2SC3659 Description
·High Breakdown Voltage- : VCES= 1700V (Min) ·Built-in Damper Didoe ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high power switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3659 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.