2SC5463
DESCRIPTION
- Low Noise Figure
NF = 1.1 d B TYP. @VCE = 8 V, IC = 5 m A, f = 1 GHz
- High Gain
︱S21e︱2 = 12 d B TYP. @VCE = 8 V, IC = 15 m A, f = 1 GHz
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in VHF~ UHF band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
60 m A
℃
Tstg
Storage Temperature Range
-55~125
℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
