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2SC5463 - Silicon NPN RF Transistor

Datasheet Summary

Description

NF = 1.1 dB TYP.

︱S21e︱2 = 12 dB TYP.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF~

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Datasheet Details

Part number 2SC5463
Manufacturer Inchange Semiconductor
File Size 174.63 KB
Description Silicon NPN RF Transistor
Datasheet download datasheet 2SC5463 Datasheet
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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5463 DESCRIPTION ·Low Noise Figure NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GHz ·High Gain ︱S21e︱2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF~ UHF band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 60 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.
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