Datasheet Details
| Part number | 2SD1646 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.53 KB |
| Description | Power Transistor |
| Datasheet | 2SD1646_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1646 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.53 KB |
| Description | Power Transistor |
| Datasheet | 2SD1646_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·High DC Current Gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1646 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
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