| Part number | 2SD1646 |
|---|---|
| Datasheet | 2SD1646_InchangeSemiconductor.pdf |
| File Size | 209.53 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·High DC Current Gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
See all Inchange Semiconductor datasheets
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|---|---|
| 2SD1640 | Silicon NPN Power Transistor |
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| 2SD1602 | Power Transistor |
| 2SD1604 | Power Transistor |
| 2SD1605 | Power Transistor |
| 2SD1606 | Silicon NPN Power Transistor |
| 2SD1608 | Power Transistor |
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| 2SD1656 | Power Transistor |
| 2SD1662 | Silicon NPN Power Transistor |
