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BDT82 - Silicon PNP Power Transistor

General Description

DC Current Gain -hFE = 40(Min)@ IC= -5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 Complement to Type BDT81/83/85/87 Minimum Lot-to-Lot variations for robust device performance and reliable operatio

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isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 ·Complement to Type BDT81/83/85/87 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT82 -60 VCBO Collector-Base Voltage BDT84 BDT86 -80 -100 BDT88 -120 BDT82 -60 VCEO BDT84 Collector-Emitter Voltage BDT86 -80 -100 BDT88 -120 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -15 ICM Collector Current-Peak -20 IB Base Current -4 PC