DC Current Gain -hFE = 40(Min)@ IC= -5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F
Complement to Type BDT81F/83F/85F/87F
Minimum Lot-to-Lot variations for robust device
performance and reliable
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isc Silicon PNP Power Transistors
BDT82F/84F/86F/88F
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F
·Complement to Type BDT81F/83F/85F/87F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT82F
-60
VCBO
Collector-Base Voltage
BDT84F BDT86F
-80 -100
BDT88F
-120
BDT82F
-60
VCEO
Collector-Emitter Voltage
BDT84F BDT86F
-80 -100
BDT88F
-120
VEBO
Emitter-Base Voltage
-7
IC
Collector Current-Continuous
-15
ICM
Collector Current-Peak
-20
IB
BDT82F Datasheet
