Datasheet Details
| Part number | BU508A-2 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.86 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BU508A-2-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor BU508A.
| Part number | BU508A-2 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.86 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BU508A-2-InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Power Dissipation- : PD= 100W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current- Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
| Part Number | Description |
|---|---|
| BU508A-M | Silicon NPN Power Transistor |
| BU508AT | Silicon NPN Power Transistor |
| BU522 | Silicon Darlington NPN Power Transistor |
| BU522A | Silicon Darlington NPN Power Transistor |