BU508A-2
BU508A-2 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min)
- High Power Dissipation-
: PD= 100W@TC= 25℃
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0) 1500
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Base Current- Continuous
Base Current-Peak
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg...
