Datasheet Details
| Part number | BUK444-220A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 61.32 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | BUK444-220A-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | BUK444-220A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 61.32 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | BUK444-220A-InchangeSemiconductor.pdf |
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·5.3A, 200V • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • Majority Carrier Device • Related Literature APPLICATIONS ·use in Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=37℃ Total Dissipation@TC=25℃ Max.
Operating Junction Temperature Storage Temperature Range 200 ±30 5.3 25 150 150 V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient 5 ℃/W 55 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification BUK444-200A ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS;
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