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IRF133 - N-Channel MOSFET Transistor

General Description

Drain Current ID=12A@ TC=25℃ Drain Source Voltage- : VDSS= 60V(Min) Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) High Power,High Speed Applications APPLICATIONS Switching power supplies UPS Motor controls

High energy pulse circuits.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF133 DESCRIPTION ·Drain Current ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) ·High Power,High Speed Applications APPLICATIONS ·Switching power supplies ·UPS ·Motor controls ·High energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 60 ±20 V V Drain Current-continuous@ TC=25℃ 12 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.67 ℃/W isc website：www.iscsemi.