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2SC2845 - Silicon Power Transistor

Datasheet Summary

Description

Low Noise High Gain High Current-Gain Bandwidth Product APPLICATIONS

Designed for use in UHF low noise amplifier.

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Datasheet Details

Part number 2SC2845
Manufacturer Inchange
File Size 109.29 KB
Description Silicon Power Transistor
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INCHANGE Semiconductor www.DataSheet4U.com isc RF Product Specification isc Silicon NPN RF Transistor 2SC2845 DESCRIPTION ·Low Noise ·High Gain ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 70 mA PC Collector Power Dissipation @TC=25℃ 0.2 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.
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