3CD6D Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min.) ·DC Current Gain- : hFE=10-180@IC= -2.5A ·Collector-Emitter Saturation Voltage-.
3CD6D is PNP Transistor manufactured by Inchange Semiconductor.
| Part Number | Description |
|---|---|
| 3CD3C | PNP Transistor |
| 3CD834 | PNP Transistor |
| 3CD9A | PNP Transistor |
| 3CD9B | PNP Transistor |
| 3CD9C | PNP Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min.) ·DC Current Gain- : hFE=10-180@IC= -2.5A ·Collector-Emitter Saturation Voltage-.