3CD6D
3CD6D is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.)
- DC Current Gain-
: h FE=10-180@IC= -2.5A
- Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ IC= -2.5A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier
- Low speed switching
- Power regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
VCEO
Collector-Emitter Voltage
-110
VEBO
Emitter-Base Voltage
-4
Collector Current-Continuous
Collector Power Dissipation @TC=75℃
Junction...
