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3CD6D - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min.) DC Current Gain- : hFE=10-180@IC= -2.5A Collector-Emitter Saturation Voltage- : VCE(sat)= -1.5V(Max)@ IC= -2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min.) ·DC Current Gain- : hFE=10-180@IC= -2.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.5V(Max)@ IC= -2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier ·Low speed switching ·Power regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=75℃ TJ Junction Temperature -5 A 50 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 3CD6D isc website：www.iscsemi.