Download 2SB817 Datasheet PDF
2SB817 page 2
Page 2

2SB817 Description

·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB817 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA;.