2SB834 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;.
- Part: 2SB834
- Manufacturer: Inchange Semiconductor (official site)
- Size: 218.17 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SB834 | Silicon PNP Transistor |
Weitron Technology |
2SB834 | PNP Silicon Epitaxial Power Transistor |
Savantic |
2SB834 | Silicon PNP Power Transistors |
Unisonic Technologies |
2SB834 | HIGH VOLTAGE TRANSISTOR |
TGS |
2SB834 | Transistor |