2SB834 Datasheet | Specifications & PDF Download

www.DataSheet.co.kr 2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat

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UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COL

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A www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ A www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ A www.DataShee

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TIGER ELECTRONIC CO.,LTD 2SD880 / 2SB834 DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (

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2SB834(BR3CA834R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 PNP 。Silicon PNP transistor in a TO-220 Plastic Package. / Features ，, 2SD880

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2SB834I Rev.E Mar.-2016 DATA SHEET / Descriptions TO-251 PNP 。Silicon PNP transistor in a TO-251 Plastic Package.  / Features ，, 2SD880I 。 Lo

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isc Silicon PNP Power Transistor 2SB834 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Vo

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UNISONIC TECHNOLOGIES CO., LTD 2SB834 HIGH VOLTAGE TRANSISTOR „ DESCRIPTION Low frequency power amplifier applications. PNP SILICON TRANSISTOR Lead-

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PNP Epitaxial Silicon Transistor FEATURES z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB834 DESCRIPTION ·With TO-220 package ·Low collector saturation volta

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Elektronische Bauelemente 2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre

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: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES C.3 MAX. Unit in mm 3.6±C • Low Co

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