2SD1918 Description
·High fT：fT=80MHz(TYP) ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;.