3DD102 Overview
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) - DC Current Gain- : hFE= 20(Min.)@IC= 2A - Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A.
| Part | 3DD102 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 151.04 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 3DD102D | Inchange Semiconductor | NPN Transistor |
| 3DD102 | Shaanxi Qunli Electric | NPN Silicon Low Frequency High Power Transistor |
| 3DD101D | Inchange Semiconductor | NPN Transistor |
| 3DD101D | SJ | Power Transistor |
| 3DD101A | SJ | Power Transistor |