BD546C Overview
Key Specifications
Package: TO-218-3
Mount Type: Through Hole
Pins: 3
Max Operating Temp: 150 °C
Description
Collector Current -IC= -15A - Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A -80V(Min)- BD546B; -100V(Min)- BD546C - Complement to Type BD545/A/B/C - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in general purpose power amplifier and switching applications SYMBOL PARAMETER VALUE UNIT BD546 -40 BD546A -60 VCBO Collector-Base Voltage V BD546B -80 BD546C -100 BD546 -40 VCEO Collector-Emitter Voltage BD546A -60 V BD546B -80 BD546C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 3.5 W 85 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c 1.47 ℃/W Rth j-c isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER BD546 V(BR)CEO Collector-Emitter Breakdown Voltage BD546A BD546B BD546C VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage BD546 ICES Collector Cutoff Current BD546A BD546B BD546C ICEO Collector Cutoff Current BD546/A BD546B/C IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain Switching times ton Turn-on Time toff Turn-off Time CONDITIONS IC= -30mA ;IB=0 IC= -5A; IB= -0.625A IC= -10A; IB= -2A IC= -10A; VCE= -4V VCE= -40V; VBE= 0 VCE= -60V; VBE= 0 VCE= -80V; VBE= 0 VCE= -100V; VBE= 0 VCE= -30V; IB= 0 VCE= -60V; IB= 0 VEB= -5V; IC= 0 IC= -1A; VCE= -4V IC= -5A; VCE= -4V.
