BD546C Datasheet
BD546C Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Collector Current -IC= -15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A -80V(Min)- BD546B; -100V(Min)- BD546C ·Complement to Type BD545/A/B/C ·Minimum Lot-t.
e 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD546 V(BR)CEO Collector-Emitter Breakdown .
BD546C Datasheet (Bourns)
Bourns
BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD545 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Cur.
.