KSD5000 Description
·High Breakdown Voltage- : IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V.
- Part: KSD5000
- Manufacturer: Inchange Semiconductor (official site)
- Size: 122.22 KB
Related Inchange Semiconductor Datasheets
| Part Number | Description |
|---|---|
| KSD5001 | Silicon NPN Power Transistor |
| KSD5002 | Silicon NPN Power Transistor |
| KSD5003 | Silicon NPN Power Transistor |
| KSD5004 | Silicon NPN Power Transistor |
| KSD5005 | Silicon NPN Power Transistor |