BFR360
BFR360 is NPN Silicon RF Transistor manufactured by Infineon.
BFR360F
NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz
3 1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR360F
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 98°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction
- soldering point2)
Marking FBs
Pin Configuration 1=B 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA...