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SIDC11D60SIC3
Silicon Carbide Schottky Diode
FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction • No forward recovery Applications: • SMPS, PFC, snubber
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Chip Type
SIDC11D60SIC3
VBR 600V
IF 4A
Die Size 1.15 x 0.97 mm2
Package sawn on foil
Ordering Code Q67050-A4161A104
MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1.15 x 0.97 mm 0.85 x 0.67 1.116 / 0.
SIDC11D60SIC3 Datasheet
