SIDC24D60SIC3 Datasheet | Infineon

Silicon Carbide Schottky Diode Features : - - - - - Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery Applications: - SMPS, PFC, snubber Chip Type VBR 600V IF 8A Die Size 1.706 x 1.38 mm2 Package sawn on foil Ordering Code Q67050-A4281A101 MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Remended Storage Environment 1.706x 1.38 mm 1.405 x 1.08...