SIDC24D30SIC3 Datasheet | Infineon

Silicon Carbide Schottky Diode Features : - - - - - Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery Applications: - SMPS, snubber, secondary side rectification Chip Type VBR 300V IF 10A Die Size 1.706 x 1.38 mm2 Package sawn on foil Ordering Code Q67050-A4163A103 MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Remended Storage Environment...