Click to expand full text
SIDC24D30SIC3
Silicon Carbide Schottky Diode
FEATURES: • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery Applications: • SMPS, snubber, secondary side rectification
A
C
Chip Type
SIDC24D30SIC3
VBR 300V
IF 10A
Die Size 1.706 x 1.38 mm2
Package sawn on foil
Ordering Code Q67050-A4163A103
MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1.706x 1.38 mm 1.405 x 1.08 2.354 / 1.
SIDC24D30SIC3 Datasheet
