• Part: SIDC19D60SIC3
  • Description: Silicon Carbide Schottky Diode
  • Manufacturer: Infineon
  • Size: 54.27 KB
Download SIDC19D60SIC3 Datasheet PDF
Infineon
SIDC19D60SIC3
SIDC19D60SIC3 is Silicon Carbide Schottky Diode manufactured by Infineon.
Silicon Carbide Schottky Diode Features : - Worlds first 600V Schottky diode - Revolutionary semiconductor material Silicon Carbide - Switching behavior benchmark - No reverse recovery - No temperature influence on the switching behavior - Ideal diode for Power Factor Correction - No forward recovery Applications: - SMPS, PFC, snubber Chip Type VBR 600V IF 6A Die Size 1.38 x 1.38 mm2 Package sawn on foil Ordering Code Q67050-A4162A104 MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond...