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BSC028N06NS - MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • Optimized for high performance SMPS, e. g. sync. rec.
  • 175°C rated.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N‑channel.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public BSC028N06NS Final datasheet MOSFET OptiMOS™ Power‑Transistor, 60 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 175°C rated • 100% avalanche tested • Superior thermal resistance • N‑channel • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),max ID Qoss QG(0..10V) Key Performance Parameters Value Unit 60 V 2.8 mΩ 137 A 43 nC 37 nC Type/Ordering Code BSC028N06NS Package PG‑TDSON‑8 PG‑TDSON‑8 8765 5678 1 234 4 32 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Marking 028N06NS Related Links ‑ Datasheet https://www.infineon.com 1 Revision 2.