Datasheet4U Logo Datasheet4U.com

BSC028N06NST - 60V MOSFET

General Description

.

.

.

.

Key Features

  • Optimized for high performance SMPS, e. g. sync. rec.
  • 175 °C rated.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSC028N06NS MOSFET Infineon Technologies
BSC020N03LSG MOSFET Infineon Technologies
BSC022N03 OptiMOS2 Power-Transistor Infineon Technologies AG
BSC022N03S OptiMOS2 Power-Transistor Infineon Technologies AG
BSC014N03LS N-Channel 30V MOSFET VBsemi

Other Datasheets by Infineon

Part Number Description
BSC028N06LS3 MOSFET
BSC028N06LS3G MOSFET
BSC020N03LS MOSFET
BSC020N03MSG Power MOSFET
BSC021N08NS5 80V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSC028N06NST MOSFET OptiMOSTMPower-Transistor,60V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •175°Crated •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 2.8 mΩ ID 137 A Qoss 43 nC QG(0..10V) 37 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC028N06NST Package PG-TDSON-8 Marking 028N06NT RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2020-09-21 OptiMOSTMPower-Transistor,60V BSC028N06NST TableofContents Description . . . . . .