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BSC028N06LS3 - MOSFET

Download the BSC028N06LS3 datasheet PDF. This datasheet also covers the BSC028N06LS3G variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • N-channel, logic level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BSC028N06LS3G-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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BSC014N03LS N-Channel 30V MOSFET VBsemi

Other Datasheets by Infineon

Part Number Description
BSC028N06LS3G MOSFET
BSC028N06NST 60V MOSFET
BSC020N03LS MOSFET
BSC020N03MSG Power MOSFET
BSC021N08NS5 80V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSC028N06LS3G MOSFET OptiMOSTM3Power-Transistor,60V Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •N-channel,logiclevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 2.8 mΩ ID 174 A SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC028N06LS3 G Package PG-TDSON-8 Marking 028N06LS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.