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BSC028N06LS3G - MOSFET

General Description

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Key Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • N-channel, logic level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC028N06LS3G MOSFET OptiMOSTM3Power-Transistor,60V Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •N-channel,logiclevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 2.8 mΩ ID 174 A SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC028N06LS3 G Package PG-TDSON-8 Marking 028N06LS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.