BSC152N10NSFG
BSC152N10NSFG is Power-Transistor manufactured by Infineon.
OptiMOS®2 Power-Transistor
Features
- Very low gate charge for high frequency applications
- Optimized for dc-dc conversion
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 150 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
BSC152N10NSF G
Product Summary V DS R DS(on),max ID
100 V 15.2 mΩ 63 A
PG-TDSON-8
Type BSC152N10NSF G
Package PG-TDSON-8
Marking 152N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C T C=100 °C
T A=25 °C, R thJA=50 K/W2)
Pulsed drain current3)...
