BSC152N10NSFG Overview
OptiMOS®2 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS pliant • Qualified according to JEDEC1) for target application BSC152N10NSF G Product Summary V DS R DS(on),max ID 100 V 15.2 mΩ 63 A PG-TDSON-8 Type...
BSC152N10NSFG Key Features
- Very low gate charge for high frequency
BSC152N10NSFG Applications
- Optimized for dc-dc conversion