IDH08S120 - Schottky Diode

Features

Revolutionary semiconductor material - Silicon Carbide.
Switching behavior benchmark.
No reverse recovery / No forward recovery.
Temperature independent switching behavior.
High surge current capability.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

Datasheet Details

Part number	IDH08S120
Manufacturer	Infineon Technologies
File Size	624.65 KB
Description	Schottky Diode
Datasheet	IDH08S120 Datasheet
Additional preview pages of the IDH08S120 datasheet.

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Full PDF Text Transcription

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IDH08S120 thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Optimized for high temperature operation www.DataSheet4U.net • Lowest Figure Product Summary VDC QC IF; TC< 130 °C 1200 600 3.2 27 7.5 3 V nC A PG-TO220-2 of Merit QC/IF thinQ!TM Diode designed for fast switching applications like: • SMPS e.g.

Published: Jul 7, 2011 |