IDH08SG60C - Schottky Diode

Features

Revolutionary semiconductor material - Silicon Carbide.
Switching behavior benchmark.
No reverse recovery / No forward recovery.
Temperature independent switching behavior.
High surge current capability.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

Datasheet Details

Part number	IDH08SG60C
Manufacturer	Infineon Technologies
File Size	508.88 KB
Description	Schottky Diode
Datasheet	IDH08SG60C Datasheet
Additional preview pages of the IDH08SG60C datasheet.

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Full PDF Text Transcription

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3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit QC/IF Product Summary VDC QC IF; TC< 130 °C IDH08SG60C 600 V 12 nC 8A thinQ! 3G Diode designed for fast switching applications like: • SMPS e.g.

Published: Jul 7, 2011 |