IPB80N04S2-04 Datasheet | Infineon

Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - Ultra low Rds(on) - 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 40 3.4 80 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N04S2-04 IPP80N04S2-04 IPI80N04S2-04 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code SP0002-18154 SP0002-19054 SP0002-19058 Marking 2N0404 2N0404 2N0404 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) .. Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 80 80 320 810 ±20 Unit A Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=80A m J V W °C T C=25 °C 300 -55 ... +175 55/175/56 Rev. 1.0 page 1 2006-03-02 IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R th JC R th JA R th JA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 m A V GS(th) V DS=V GS, I D=250 µA V DS=40 V, V GS=0 V, T j=25 °C V DS=40 V, V GS=0 V, T j=125 °C2) .. Values typ. max. Unit - - 0.5 62 62 40 K/W 40...