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IPB80N04S3-03 - Power-Transistor

Datasheet Summary

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (RoHS compliant).
  • Ultra low Rds(on).
  • 100% Avalanche tested IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.2 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S3-03 IPI80N04S3-03 IPP80N04S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO2.

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Datasheet Details

Part number IPB80N04S3-03
Manufacturer Infineon Technologies
File Size 185.70 KB
Description Power-Transistor
Datasheet download datasheet IPB80N04S3-03 Datasheet
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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.
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