IPB80N04S2L-03
IPB80N04S2L-03 is Power-Transistor manufactured by Infineon.
Features
- N-channel Logic Level
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (lead free)
- Ultra low Rds(on)
- 100% Avalanche tested
Product Summary V DS R DS(on),max (SMD version) ID 40 3.1 80 V mΩ A
PG-TO263-3-2
PG-TO220-3-1
Type IPB80N04S2L-03 IPP80N04S2L-03
Package PG-TO263-3-2 PG-TO220-3-1
Ordering Code SP0002-20158 SP0002-19063
Marking 2N04L03 2N04L03
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1)
..
Symbol ID
Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2)
Value 80 80 320 810 ±20
Unit A
Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature
I D,pulse E AS V GS P tot T j, T stg
T C=25 °C I D=80A m J V W °C
T C=25 °C
300 -55 ... +175
Rev. 1.0 page 1
2006-03-02
IPB80N04S2L-03 IPP80N04S2L-03
Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction
- case Thermal resistance, junction ambient, leaded SMD version, device on PCB R th JC R th JA R th JA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 m A V GS(th) V DS=V GS, I D=250 µA V DS=40 V, V GS=0 V, T j=25 °C V DS=40 V, V GS=0 V, T j=125 °C2)
..
Values typ. max.
Unit
- -
0.5 62 62 40
K/W
40...
