IPB80N04S2-H4
IPB80N04S2-H4 is Power-Transistor manufactured by Infineon.
Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Ultra low Rds(on)
- 100% Avalanche tested
- Green product (Ro HS pliant)
IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4
Product Summary V DS R DS(on),max (SMD version) ID
40 V 3.7 mΩ 80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB80N04S2-H4 IPP80N04S2-H4 IPI80N04S2-0H4
Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1
Marking 2N04H4 2N04H4 2N04H4
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 80
320 660 ±20 300 -55 ... +175 55/175/56
Unit A m J V W °C
Rev. 1.1 page 1
2008-02-22
IPB80N04S2-H4 IPP80N04S2-H4,...
