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IPD26CNE8NG - Power-Transistor

This page provides the datasheet information for the IPD26CNE8NG, a member of the IPB-26CNE Power-Transistor family.

Datasheet Summary

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

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IPD26CNE8NG Power-Transistor by Infineon Technologies - Datasheet Preview — Datasheet preview – IPD26CNE8NG

Datasheet Details

Part number	IPD26CNE8NG
Manufacturer	Infineon Technologies
File Size	686.06 KB
Description	Power-Transistor
Datasheet	IPD26CNE8NG Datasheet
Additional preview pages of the IPD26CNE8NG datasheet.

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Published: Apr 9, 2008 |