• Part: IPD22N08S2L-50
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 147.35 KB
Download IPD22N08S2L-50 Datasheet PDF
Infineon
IPD22N08S2L-50
IPD22N08S2L-50 is Power-Transistor manufactured by Infineon.
Features - N-channel Logic Level - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - Ultra low Rds(on) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 75 V 50 mΩ 25 A PG-TO252-3-11 Type IPD22N08S2L-50 Package Marking PG-TO252-3-11 2N08L50 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Pulsed drain current1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=22A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 27 108 94 ±20 75 -55 ... +175 55/175/56 Unit A m J V W °C Rev. 1.0 page 1 2006-07-18 Parameter...