IPD250N06N3G Datasheet | Infineon

Features - Ideal for high frequency switching and sync. rec. - Optimized technology for DC/DC converters - Excellent gate charge x R DS(on) product (FOM) - N-channel, normal level - 100% avalanche tested - Pb-free plating; Ro HS pliant - Qualified according to JEDEC1) for target applications Type IPD250N06N3 G Product Summary V DS R DS(on),max ID IPD250N06N3 G 60 V 25 mΩ 28 A Package Marking PG-TO252-3 250N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) I D,pulse Avalanche energy, single pulse3) E AS Gate source voltage V GS 1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C T C=25 °C I D=20 A, R GS=25 Ω Value 28 20 112 13 ±20 Unit A m J V Rev.2.0 page 1 2008-11-26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg IEC climatic category; DIN IEC 68-1 IPD250N06N3...