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IPD25N06S4L-30 - Power-Transistor

Datasheet Summary

Features

  • N-channel - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPD25N06S4L-30 Product Summary VDS RDS(on),max ID 60 V 30 mW 25 A PG-TO252-3-11 Type IPD25N06S4L-30 Package Marking PG-TO252-3-11 4N06L30 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=.

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Datasheet Details

Part number IPD25N06S4L-30
Manufacturer Infineon Technologies
File Size 235.84 KB
Description Power-Transistor
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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD25N06S4L-30 Product Summary VDS RDS(on),max ID 60 V 30 mW 25 A PG-TO252-3-11 Type IPD25N06S4L-30 Package Marking PG-TO252-3-11 4N06L30 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=12.5A I AS - V GS - P tot T C=25°C T j, T stg - Value 25 17 92 12 25 ±16 29 -55 ...
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