IPD25CNE8NG
IPD25CNE8NG is Power-Transistor manufactured by Infineon.
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max (TO252) ID
85 V 25 mΩ 35 A
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
Type
IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
Package Marking
PG-TO263-3 26CNE8N
PG-TO252-3 25CNE8N
PG-TO262-3 26CNE8N
PG-TO220-3 26CNE8N
PG-TO251-3 25CNE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=35 A, R GS=25 Ω
Reverse diode dv /dt dv /dt
I D=35 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for...
